| PART |
Description |
Maker |
| SSM6E03TU |
Multi-chip discrete device (P-ch N-ch)
|
TOSHIBA
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
|
TOSHIBA
|
| TH50VSF3582AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| DPS128X16A3-85M DPS128X16H3-85M DPS128X16H3-85B DP |
256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CPGA50 CERAMIC, MODULE, SLCC, PGA-50
256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CQFP48 GULLWING, SLCC-48
256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CQIP48 SLCC-48
|
Twilight Technology, Inc.
|
| TPCF8B01 |
MOSFET TPC Series
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
|
TOSHIBA[Toshiba Semiconductor]
|
| MF3128-MLDAP01 MF3256-MLDAP01 MF3512-MLDAP01 |
128K X 8 MULTI DEVICE SRAM CARD, 200 ns, XMA60
256K X 8 MULTI DEVICE SRAM CARD, 200 ns, XMA60
512K X 8 MULTI DEVICE SRAM CARD, 200 ns, XMA60
|
|
| WS512K8L-20CM WS512K8L-20CQA WS512K8-XCX WS512K8-2 |
512K X 8 MULTI DEVICE SRAM MODULE, 45 ns, CDIP32
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CDIP32
512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CDIP32
512Kx8 SRAM MODULE, SMD 5962-92078
|
WEDC[White Electronic Designs Corporation]
|
| VSMP1206 |
Z-Based Bulk Metal Foil Technology Discrete High Precision Surface Mount Chip Resistor High Power - Excellent Long Term Stabilty Z -基大块金属箔技术离散高精度表面贴装芯片电阻，高功率-卓越的长期稳
Resistors, fixed discrete
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| P1200SL P2000SL |
LCAS Asymmetrical Discrete Device
|
Littelfuse
|
